2012. 5. 14 1/7 semiconductor technical data KU024N06P n-ch trench mos fet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converter, synchronous rectification and a load switch in battery powered applications features h v dss = 60v, i d = 200a h drain-source on resistance : r ds(on) =2.4m ? (max.) @v gs = 10v maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. calculated continuous current based on maximum allowable junction temperature characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 200* a @t c =100 ? 126 pulsed (note1) i dp 504* single pulsed avalanche energy (note 2) e as 1,500 mj repetitive avalanche energy (note 1) e ar 20 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 192 w derate above 25 ? 1.54 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 ~ 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 0.65 ? /w thermal resistance, junction-to-ambient r thja 62.5 ? /w pin connection k free datasheet http:///
2012. 5. 14 2/7 KU024N06P revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 60 - - v breakdown voltage temperature coefficient bv dss / t j i d =5ma, referenced to 25 ? - 0.06 - v/ ? drain cut-off current i dss v ds =60v, v gs =0v, - - 10 ua gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =80a - 2.1 2.4 m ? dynamic total gate charge q g v ds =48v, i d =80a v gs =10v (note4,5) - 200 - nc gate-source charge q gs - 40 - gate-drain charge q gd - 70 - turn-on delay time t d(on) v dd =30v i d =80a r g =25 ? (note4,5) - 170 - ns turn-on rise time t r - 300 - turn-off delay time t d(off) - 550 - turn-off fall time t f - 280 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 11,000 - pf output capacitance c oss - 1,400 - reverse transfer capacitance c rss - 700 - source-drain diode ratings continuous source current i s v gs 2012. 5. 14 3/7 KU024N06P revision no : 0 free datasheet http:///
2012. 5. 14 4/7 KU024N06P revision no : 0 free datasheet http:///
2012. 5. 14 5/7 KU024N06P revision no : 0 free datasheet http:///
2012. 5. 14 6/7 KU024N06P revision no : 0 free datasheet http:///
2012. 5. 14 7/7 KU024N06P revision no : 0 free datasheet http:///
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